Dark Energy and Fate of the Universe

We explore the ultimate fate of the Universe by using a divergence-free parametrization for dark energy $w(z)=w_0+w_a({\ln (2+z)\over 1+z}-\ln2)$. Unlike the CPL parametrization, this parametrization has well behaved, bounded behavior for both high redshifts and negative redshifts, and thus can genuinely cover many theoretical dark energy models. After constraining the parameter space of this parametrization by using the current cosmological observations, we find that, at the 95.4% confidence level, our Universe can still exist at least 16.7 Gyr before it ends in a big rip. Moreover, for the phantom energy dominated Universe, we find that a gravitationally bound system will be destroyed at a time $t \simeq P\sqrt{2|1+3w(-1)|}/[6\pi |1+w(-1)|]$, where $P$ is the period of a circular orbit around this system, before the big rip.Comment: 5 pages, 3 figures; typos corrected, publication version, Sci China-Phys Mech Astron, doi: 10.1007/s11433-012-4748-

Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate

Transition-metal dichalcogenide (TMD) semiconductors have been widely studied due to their distinctive electronic and optical properties. The property of TMD flakes is a function of its thickness, or layer number (N). How to determine N of ultrathin TMDs materials is of primary importance for fundamental study and practical applications. Raman mode intensity from substrates has been used to identify N of intrinsic and defective multilayer graphenes up to N=100. However, such analysis is not applicable for ultrathin TMD flakes due to the lack of a unified complex refractive index ($\tilde{n}$) from monolayer to bulk TMDs. Here, we discuss the N identification of TMD flakes on the SiO$_2$/Si substrate by the intensity ratio between the Si peak from 100-nm (or 89-nm) SiO$_2$/Si substrates underneath TMD flakes and that from bare SiO$_2$/Si substrates. We assume the real part of $\tilde{n}$ of TMD flakes as that of monolayer TMD and treat the imaginary part of $\tilde{n}$ as a fitting parameter to fit the experimental intensity ratio. An empirical $\tilde{n}$, namely, $\tilde{n}_{eff}$, of ultrathin MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes from monolayer to multilayer is obtained for typical laser excitations (2.54 eV, 2.34 eV, or 2.09 eV). The fitted $\tilde{n}_{eff}$ of MoS$_{2}$ has been used to identify N of MoS$_{2}$ flakes deposited on 302-nm SiO$_2$/Si substrate, which agrees well with that determined from their shear and layer-breathing modes. This technique by measuring Raman intensity from the substrate can be extended to identify N of ultrathin 2D flakes with N-dependent $\tilde{n}$ . For the application purpose, the intensity ratio excited by specific laser excitations has been provided for MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes and multilayer graphene flakes deposited on Si substrates covered by 80-110 nm or 280-310 nm SiO$_2$ layer.Comment: 10 pages, 4 figures. Accepted by Nanotechnolog